BUK9D120-60PX

$0.14

Description：BUK9D120-60P/SOT1220/SOT1220
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR)

SKU:4f6da68e99ac Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：BUK9D120-60P/SOT1220/SOT1220
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：3A (Ta), 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：120mOhm @ 3A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：18 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：713 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.3W (Ta), 15W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：DFN2020MD-6
Package / Case：6-UDFN Exposed Pad

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BUK9D120-60PX

Overview

The BUK9D120-60P is a P-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It is housed in a leadless DFN2020MD-6 (SOT1220) plastic package measuring 2 x 2 x 0.65 mm. The device supports a drain-source voltage of -60 V and a continuous drain current of -8 A at 25 °C solder point temperature. Key electrical parameters include a maximum on-state resistance of 120 mΩ at VGS = -10 V, total power dissipation of 15 W, and an extended junction temperature range up to 175 °C.

Feature Summary

Logic-level compatible for direct interface with standard logic drivers
AEC-Q101 qualified for automotive reliability standards
Side wettable flanks enable optical solder joint inspection
Ultra-thin leadless package design reduces footprint and height

Applications

Relay driver circuits
High-speed line drivers
High-side load switching
General purpose switching applications

Procurement Notes

Verify the specific ordering suffix matches the required tape and reel configuration. Confirm that the component marking code RJ corresponds to the intended revision level. Ensure the procurement documentation references the latest product data sheet version to guarantee compliance with current manufacturing specifications and quality standards.

Selection Notes

Select this component when a compact P-channel solution is required for high-side switching or relay control. The low thermal resistance from junction to solder point facilitates efficient heat transfer to the PCB copper plane. Verify that the gate drive voltage meets the logic-level compatibility requirements for optimal on-state performance.

Part Context

This device belongs to Nexperia's portfolio of automotive-grade discrete semiconductors. It utilizes advanced Trench MOSFET technology to achieve low on-resistance within a minimal surface-mount footprint. The DFN2020MD-6 package provides enhanced thermal performance compared to traditional small outline packages while maintaining a low profile suitable for space-constrained designs.