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Product Detailed Parameters
- Description：PFET, 75A I(D), 30V, 0.0044OHM,
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：3mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：56 nC @ 5 V
- Vgs (Max)：±15V
- Input Capacitance (Ciss) (Max) @ Vds：6.526 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：254W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：I2PAK
- Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
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Overview
The BUK9E04-30B,127 is an N-channel TrenchMOS logic level enhancement mode Field-Effect Transistor (FET) manufactured by Nexperia. It utilizes TrenchMOS technology to achieve low on-state resistance, resulting in reduced conduction losses. The device is designed for operation in thermally demanding environments with a maximum junction temperature rating of 175 °C. It is qualified to the AEC-Q101 standard, ensuring compliance for use in automotive critical applications. The component is housed in a plastic package suitable for surface mount assembly.
Feature Summary
- Logic level gate drive compatibility
- AEC-Q101 automotive qualification
- Low conduction losses via TrenchMOS technology
- High thermal stability up to 175 °C
Applications
- Automotive systems
- 12 V loads
- General purpose power switching
- Motors, lamps and solenoids
Procurement Notes
Verify current availability status as the product may be subject to end-of-life restrictions or limited supply conditions. Confirm that the specific suffix matches the required packaging format for your manufacturing line. Ensure design-in approval aligns with the AEC-Q101 qualification requirements before finalizing procurement plans.
Selection Notes
Select this component when low conduction losses and logic-level gate drive are required in space-constrained designs. The 175 °C rating makes it suitable for high-temperature environments where standard devices might fail. Verify that the package type meets the thermal dissipation needs of the specific application circuit.
Part Context
This part belongs to Nexperia's portfolio of N-channel TrenchMOS FETs. These devices are engineered to provide efficient power switching solutions for both general-purpose and automotive markets. The integration of TrenchMOS technology allows for improved performance metrics compared to traditional planar MOSFETs within similar package footprints.
Replacement Considerations
Consult official Nexperia documentation for verified substitute part numbers. Do not assume cross-compatibility with other N-channel MOSFETs without verifying pinout, voltage ratings, and thermal characteristics against the original specifications.
