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Product Detailed Parameters
- Description：MOSFET N-CH 40V 75A I2PAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.3V, 10V
- Rds On (Max) @ Id, Vgs：4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：128 nC @ 5 V
- Vgs (Max)：±15V
- Input Capacitance (Ciss) (Max) @ Vds：8260 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：300W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：I2PAK
- Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
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Overview
The BUK9E04-40A,127 is a logic level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in an I2PAK (SOT226) plastic package. It features a drain-source voltage of 40 V and a continuous drain current of 75 A at 25 °C mounting base temperature. The device supports a total power dissipation of 300 W under specified conditions. On-state resistance ranges from 2.9 mΩ to 5.9 mΩ depending on gate drive voltage. It includes internal source-drain diode characteristics with a reverse recovery time of 260 ns.
Feature Summary
- AEC-Q101 compliant for automotive critical applications
- Low conduction losses due to low on-state resistance
- Suitable for logic level gate drive sources
- Operates in thermally demanding environments up to 175 °C
Applications
- 12 V loads
- Automotive and general purpose power switching
- Motors, lamps and solenoids
Procurement Notes
Verify the specific ordering suffix ',127' against the manufacturer's current catalog to ensure correct packaging configuration. Confirm that the component status remains active or check for end-of-life notifications prior to final design approval. Ensure compatibility with the SOT226 footprint during PCB layout verification.
Selection Notes
Select this component for high-current switching applications requiring logic-level gate control. The I2PAK package provides robust thermal performance for power dissipation needs. Verify that the required gate drive voltage aligns with the low RDS(on) specifications to minimize conduction losses effectively.
Part Context
This part belongs to Nexperia's N-channel TrenchMOS logic level FET family. It is designed for automotive and industrial power switching. The I2PAK package offers a compact solution with a mounting base connected to the drain for efficient heat transfer.
Replacement Considerations
Check Nexperia datasheets for other BUK9E series variants with similar voltage and current ratings. Verify pinout compatibility with the SOT226 package before substitution.
