BUK9E06-55A,127

Overview

The BUK9E06-55A,127 is an N-channel TrenchMOS logic level FET in a plastic I2PAK (SOT226) package. It features a drain-source voltage of 55 V and a continuous drain current of 75 A at 25 °C. The device exhibits low on-state resistance, with typical values of 4.8 mΩ at VGS=10V and 6.3 mΩ at VGS=5V. Total power dissipation reaches 300 W at 25 °C mounting base temperature. It supports junction temperatures up to 175 °C and includes avalanche ruggedness rated at 1.1 J.

Feature Summary

• Logic level gate drive compatibility for direct interface with standard logic sources
• Automotive qualification compliant with AEC-Q101 standards
• High thermal performance supporting operation in demanding environments up to 175 °C

Applications

• 12 V and 24 V load switching
• Automotive power switching circuits
• Motor control applications
• Lamp and solenoid driving

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component for designs requiring high current handling in automotive or industrial settings. Ensure the PCB layout accommodates the I2PAK package dimensions and provides adequate thermal sinking to manage the 300 W dissipation rating. Confirm that the gate drive voltage meets the logic level requirements for optimal RDS(on) performance.

Part Context

This part belongs to Nexperia's TrenchMOS family, utilizing advanced trench technology to minimize conduction losses. The I2PAK package integrates the drain connection to a large mounting base, facilitating efficient heat transfer to the heatsink. This design supports robust performance in power switching applications where reliability and thermal management are critical.

Replacement Considerations

Check datasheet compatibility for pinout and electrical parameters when substituting. Verify thermal resistance and package dimensions match the existing footprint.