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Product Detailed Parameters
- Description：MOSFET N-CH 40V 75A I2PAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：64 nC @ 5 V
- Vgs (Max)：±15V
- Input Capacitance (Ciss) (Max) @ Vds：7.124 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：254W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：I2PAK
- Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
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Overview
The BUK9E4R4-40B,127 is an N-channel enhancement mode Field-Effect Transistor (FET) utilizing TrenchMOS technology. It features a maximum drain-source voltage of 40 V and a continuous drain current of 75 A at 25 °C. The device exhibits a low on-state resistance of 4.4 mΩ. Designed for surface mounting in a TO-263 package with three pins, it supports logic level gate drive sources. The component is qualified to the AEC-Q101 standard for automotive applications and operates within a temperature range from -55 °C to +175 °C.
Feature Summary
- AEC-Q101 compliant for automotive critical applications
- Low conduction losses due to low on-state resistance
- Suitable for logic level gate drive sources
- Operates in thermally demanding environments up to 175 °C
Applications
- 12 V loads
- Automotive systems
- General purpose power switching
- Motors, lamps and solenoids
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component when designing circuits requiring robust N-channel switching with high current handling capabilities in a compact surface-mount form factor. The low on-resistance minimizes power dissipation during conduction, while the logic-level gate compatibility simplifies driver interface requirements. Ensure thermal management strategies align with the specified 175 °C junction temperature rating for reliable operation in constrained spaces.
Part Context
This part belongs to Nexperia's TrenchMOS family, which employs advanced trench gate technology to achieve superior performance compared to planar devices. The BUK9E4R4-40B series is specifically engineered to offer low on-state resistance and fast switching speeds. It is designed to meet the stringent reliability standards required for modern automotive electronics and industrial power management applications.
Replacement Considerations
Check for direct substitutes within the same BUK9E4R4-40B series or other Nexperia TO-263 packages with matching 40V/75A ratings. Verify pinout compatibility and thermal characteristics before substitution.
