BUK9E4R9-60E,127

$0.68

Description：MOSFET N-CH 60V 100A I2PAK
Series：TrenchMOS™
Mfr：NXP USA Inc.
Package：Tube

SKU:6a8006677cb8 Category: Single FETs, MOSFETs Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 100A I2PAK
Series：TrenchMOS™
Mfr：NXP USA Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：4.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：65 nC @ 5 V
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：9710 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：234W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：I2PAK
Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA

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BUK9E4R9-60E,127

Overview

The BUK9E4R9-60E,127 is an N-channel TrenchMOS logic level field-effect transistor manufactured by Nexperia. It features a drain-source voltage (Vdss) of 60 V and a continuous drain current (Id) of 100 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 4.9 mΩ at Vgs = 10 V. It is housed in an I2PAK (TO-262AA) surface-mount package and is qualified to the AEC-Q101 standard for automotive applications.

Feature Summary

Logic level gate drive capability enabling direct control from standard microcontrollers or low-voltage drivers.
Automotive qualification compliant with AEC-Q101 standards for high reliability in demanding environments.
TrenchMOS technology providing low specific on-resistance for improved power efficiency.

Applications

High-performance automotive power management systems
Motor control circuits requiring high current handling
DC-DC converter topologies

Procurement Notes

Verify the manufacturer designation carefully, as this component is often associated with Nexperia following the acquisition of NXP's Standard Products division. Confirm the exact suffix

Selection Notes

Select this component when a 60 V rating and 100 A current capacity are required in a TO-262AA package. Ensure the application supports the thermal dissipation requirements of the I2PAK housing. Verify that the gate drive voltage meets the logic level specifications for optimal Rds(on) performance.

Part Context

This part belongs to the BUK9E series of N-channel MOSFETs designed for robust power switching. The series utilizes TrenchMOS technology to achieve low conduction losses. The I2PAK package provides a balance between thermal performance and surface-mount convenience, suitable for industrial and automotive PCB layouts.

Replacement Considerations

Direct replacements must match the 60 V, 100 A, and 4.9 mΩ specifications within the TO-262AA package. Cross-reference with other BUK9E variants if current or resistance values differ slightly, ensuring pin compatibility and thermal characteristics remain consistent.