BUK9E6R1-100E,127

$1.40

Description：MOSFET N-CH 100V 120A I2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tube

SKU:25397aef0a52 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 120A I2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：5.9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：133 nC @ 5 V
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：17.46 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：349W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：I2PAK
Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA

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BUK9E6R1-100E,127

Overview

The BUK9E6R1-100E is a logic level N-channel MOSFET utilizing TrenchMOS technology in an I2PAK (SOT226) package. Designed for high-performance automotive applications, it meets AEC-Q101 standards. Key electrical parameters include a drain-source voltage of 100 V and a continuous drain current of 120 A at 25 °C mounting base temperature. The device features a typical on-state resistance of 4.85 mΩ at VGS = 5 V and ID = 25 A. It supports a total power dissipation of 349 W and operates within a junction temperature range of -55 °C to +175 °C.

Feature Summary

AEC-Q101 compliant for automotive reliability
Repetitive avalanche rated for ruggedness
True logic level gate operation with low threshold voltage at elevated temperatures

Applications

12V, 24V and 48V Automotive systems
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current catalog to confirm package variant and tape/reel specifications. Confirm RoHS compliance status and REACH SVHC declarations via the official datasheet or product page before finalizing procurement. Ensure the component matches the required automotive qualification standards for the intended application environment.

Selection Notes

Select this component for applications requiring high current handling in a single-ended package. The low on-state resistance minimizes conduction losses. Verify that the thermal management design accommodates the specified power dissipation limits. Ensure the gate drive voltage aligns with the logic level requirements for optimal performance at varying junction temperatures.

Part Context

This part belongs to Nexperia's N-channel TrenchMOS logic level FET portfolio. It is manufactured using silicon technology and housed in the SOT226 plastic single-ended package. The device is designed to replace previous generations of similar automotive-grade MOSFETs while offering improved thermal performance and switching characteristics suitable for modern vehicle electrical architectures.

Replacement Considerations

Check for direct cross-reference part numbers from Nexperia or other manufacturers that match the 100V, 120A, and SOT226 package specifications. Verify pinout compatibility and thermal resistance values to ensure seamless integration without redesigning the PCB layout or heatsinking infrastructure.