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Product Detailed Parameters
- Description：MOSFET N-CH 55V 28SO
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：28-SO
- Package / Case：28-SOIC (0.295", 7.50mm Width)
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Overview
BUK9GTHP-55PJTR,51 is a single N-channel enhancement mode MOSFET manufactured by Nexperia. It utilizes TrenchMOS technology to achieve low on-state resistance and high efficiency in power switching applications. The device features a drain-source voltage rating of 55V and is supplied in a 28-SO plastic package. This component is designed for logic level gate drive sources and is suitable for thermally demanding environments.
Feature Summary
- Utilizes TrenchMOS technology for low conduction losses
- Designed for logic level gate drive compatibility
- Suitable for thermally demanding operational environments
Applications
- Discrete semiconductor products
- General purpose power switching
- Automotive systems
Procurement Notes
Verify the current manufacturing status before procurement as this product may be discontinued or subject to end-of-life notices. Confirm the specific suffix PJTR indicates tape and reel packaging. Ensure the 28-SO package dimensions match your PCB footprint requirements. Check for any regional tariff implications if shipping to the United States. Validate that the 55V rating meets your circuit's maximum voltage stress conditions.
Selection Notes
Select this component when a 55V N-channel MOSFET with logic level gate drive capability is required. Consider the 28-SO package size for board space constraints. Evaluate thermal management needs given the suitability for demanding environments. Compare on-state resistance values against alternative devices for efficiency optimization. Ensure the application does not require automotive AEC qualification unless explicitly verified for this specific part number.
Part Context
This part belongs to Nexperia's discrete semiconductor portfolio, specifically within the single FET and MOSFET category. It represents the company's TrenchMOS technology line, which focuses on reducing conduction losses. The manufacturer is Nexperia USA Inc., a global semiconductor provider known for standard logic and power devices.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameters such as Vgs(th) and Rds(on) when evaluating potential alternatives from other manufacturers.
