BUK9K18-40E,115

Overview

The BUK9K18-40E,115 is a dual N-channel logic level MOSFET utilizing TrenchMOS technology in an LFPAK56D (SOT1205) package. It features a drain-source voltage of 40 V and a continuous drain current of 30 A at 25 °C mounting base temperature. The maximum on-state resistance is 19.5 mΩ at VGS = 5 V and ID = 10 A. Total power dissipation reaches 38 W under specified conditions. The device operates within a junction temperature range of -55 °C to 175 °C and includes repetitive avalanche rating capabilities.

Feature Summary

• Dual MOSFET configuration integrated into a single surface-mounted package
• Qualified for high-performance automotive applications per AEC-Q101 standard
• Capable of withstanding thermally demanding environments due to 175 °C junction temperature rating
• Features true logic level gate operation with low threshold voltage characteristics

Applications

• 12 V Automotive systems
• Motors, lamps and solenoid control
• Transmission control
• Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix matches the required packaging format before procurement. Confirm that the component status remains active as specifications may change. Ensure the marking code corresponds to the intended part number variant. Cross-reference the latest datasheet revision to validate all electrical parameters against current production standards.

Selection Notes

Select this component for designs requiring dual N-channel isolation within a compact footprint. The low on-state resistance supports efficient power switching in automotive circuits. Verify thermal management requirements align with the specified power dissipation limits. Ensure gate drive voltages accommodate the logic level threshold specifications for reliable switching performance.

Part Context

This device belongs to Nexperia's TrenchMOS family, designed for robust performance in automotive environments. The LFPAK56D package provides enhanced thermal conductivity compared to traditional plastic packages. It serves as a specialized solution for space-constrained applications requiring high current handling capabilities.

Replacement Considerations

BUK9K18-40EX

FAQ

What is the maximum gate-source voltage rating?

The DC gate-source voltage rating is ±10 V, while the pulsed rating extends to ±15 V.

Is the device rated for avalanche energy?

Yes, the device is repetitively avalanche rated with a non-repetitive drain-source avalanche energy capability of 22 mJ under specified conditions.

How does the threshold voltage behave at high temperatures?

The gate-source threshold voltage decreases at elevated temperatures, maintaining a rating of greater than 0.5 V at 175 °C.