BUK9K29-100E/1X

Description：MOSFET 100V 30A LFPAK56D
Series：-

SKU:fed3b6cd9d8b Category: FET, MOSFET Arrays Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 100V 30A LFPAK56D
Series：-
Mfr：Nexperia USA Inc.
Package：Bulk
Technology：-
Configuration：-
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：100V
Current - Continuous Drain (Id) @ 25°C：30A (Ta)
Rds On (Max) @ Id, Vgs：27mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：54nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：3637pF @ 25V
Power - Max：68W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-1205, 8-LFPAK56
Supplier Device Package：LFPAK56D
Grade：Automotive
Qualification：AEC-Q101

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BUK9K29-100E/1X

Overview

The BUK9K29-100E is a dual N-channel TrenchMOS logic level FET in an LFPAK56D (SOT1205) package. It features a drain-source voltage of 100 V and a continuous drain current of 30 A at 25 °C mounting base temperature. The typical on-state resistance is 25.1 mΩ at 25 °C, rising to 68.02 mΩ at 175 °C. Total power dissipation reaches 68 W. The device supports junction temperatures from -55 °C to 175 °C and includes repetitive avalanche rating with non-repetitive energy up to 83 mJ.

Feature Summary

Qualified to AEC Q101 standard for high-performance automotive applications
Capable of operating in thermally demanding environments with a 175 °C junction temperature rating
Features true logic level gate operation with threshold voltage greater than 0.5 V at maximum temperature
Includes repetitive avalanche rating for robust performance under transient conditions

Applications

12 V Automotive systems
Motors, lamps and solenoid control
Start-stop micro-hybrid applications
Transmission control
Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as reel size or tape width. Confirm that the component version matches the required production status and quality standards. Ensure compatibility with the intended application environment before finalizing procurement orders.

Selection Notes

Select this component for designs requiring dual N-channel MOSFETs in a compact surface-mount package. Consider the thermal resistance characteristics when designing heat dissipation paths. Evaluate the gate charge requirements against the driving circuit capabilities to ensure efficient switching performance within the specified voltage and current limits.

Part Context

This part belongs to Nexperia's portfolio of dual logic level N-channel MOSFETs utilizing TrenchMOS technology. It is housed in the LFPAK56D plastic single-ended surface-mounted package. The product line is designed to meet automotive reliability standards while providing high current handling capabilities in a space-constrained form factor.

Replacement Considerations

Consult official Nexperia documentation for verified substitute part numbers. Do not assume cross-compatibility based solely on package type or general specifications without verifying electrical parameters and pin configurations.