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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 22A LFPAK56D
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：22A (Ta)
- Rds On (Max) @ Id, Vgs：32mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：7.8nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：1081pF @ 25V
- Power - Max：38W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-1205, 8-LFPAK56
- Supplier Device Package：LFPAK56D
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The BUK9K35-60RA is a dual N-channel logic level MOSFET in an LFPAK56D package, utilizing Application Specific (ASFET) repetitive avalanche silicon technology. It features a drain-source voltage of 60 V and a maximum on-state resistance of 35 mΩ at VGS = 5 V. The device supports a continuous drain current of 22 A and dissipates up to 38 W. It includes two independent FETs with integrated source-drain diodes.
Feature Summary
- Fully automotive qualified to AEC-Q101 standards for high reliability
- Rated for repetitive avalanche applications with tested endurance of 1 billion events
- LFPAK copper clip package technology ensures high robustness and thermal performance
- Gull wing leads facilitate high manufacturability and automatic optical inspection
Applications
- 12 V, 24 V and 48 V automotive systems
- Repetitive avalanche topologies
- Engine control units
- Transmission control systems
- Actuator and auxiliary loads
Procurement Notes
Verify the specific ordering suffix 'RA' corresponds to the LFPAK56D package with gull wing leads as defined in the official Nexperia datasheet. Confirm that the component meets the required AEC-Q101 qualification levels for your specific automotive application environment before finalizing procurement.
Selection Notes
Select this component when designing circuits requiring high ruggedness against repetitive avalanche energy. The dual configuration allows for space-saving designs in engine or transmission control modules. Ensure gate drive voltages support the logic level operation for optimal RDS(on) performance.
Part Context
This part belongs to Nexperia's ASFET family, specifically engineered for automotive environments where standard MOSFETs might fail under avalanche stress. It integrates two N-channel dies into a single LFPAK56D footprint, offering a compact solution for power management in modern vehicle architectures.
Replacement Considerations
Direct substitutes include other Nexperia dual N-channel 60 V MOSFETs in the LFPAK56D package, such as the BUK9K13-60E or BUK9K17-60E, provided they meet the specific repetitive avalanche requirements of the design.
FAQ
What is the maximum number of repetitive avalanche events the BUK9K35-60RA can withstand?
The device is tested to withstand 1 billion avalanche events under specified conditions.
How does the junction temperature affect the on-state resistance?
The normalized drain-source on-state resistance increases significantly as the junction temperature rises from 25 °C to 175 °C.
Is the BUK9K35-60RA suitable for non-automotive industrial applications?
Yes, while designed for automotive use, its robust construction and thermal characteristics make it suitable for demanding industrial applications requiring high reliability.
