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The BUK9K5R1-30EX is a dual logic level N-channel MOSFET utilizing TrenchMOS technology, housed in an LFPAK56D (Dual Power-SO8) package. Designed for high-performance automotive applications, it meets the AEC-Q101 standard. Key electrical parameters include a drain-source voltage of 30 V and a continuous drain current of 40 A at 25 °C. The device features a maximum on-state resistance of 5.3 mΩ at VGS = 5 V and ID = 10 A. Total power dissipation reaches 68 W at a mounting base temperature of 25 °C. It supports junction temperatures up to 175 °C.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details and availability status. Ensure the component matches the required AEC-Q101 qualification level for your target application environment. Cross-reference the marking code '95E130' with the datasheet to authenticate the physical device upon receipt.
Select this component for designs requiring dual N-channel configurations in a compact surface-mount footprint. The low on-state resistance minimizes conduction losses in power switching circuits. Verify that the gate drive voltage aligns with the logic level specifications to ensure optimal performance and thermal management within the 175 °C junction temperature limit.
This part belongs to Nexperia's BUK9K series of automotive-grade MOSFETs. It employs TrenchMOS technology to achieve high efficiency and reliability. The LFPAK56D package provides robust thermal performance and mechanical stability, making it suitable for demanding environments where space constraints and heat dissipation are critical design factors.
BUK9K5R1-30E
The maximum junction temperature is 175 °C.
Yes, it is designed and qualified to the AEC-Q101 standard.
The typical total gate charge is 26.7 nC.