BUK9M11-40HX

$0.88

Description：MOSFET N-CH 40V 35A LFPAK33
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:98ada9dceac5 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 35A LFPAK33
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：11mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：21 nC @ 10 V
Vgs (Max)：+16V, -10V
Input Capacitance (Ciss) (Max) @ Vds：1345 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：50W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：LFPAK33
Package / Case：SOT-1210, 8-LFPAK33 (5-Lead)

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BUK9M11-40HX

Overview

The Nexperia BUK9M11-40HX is an automotive qualified logic level N-channel MOSFET utilizing Trench 9 superjunction technology. It features a maximum drain-source voltage of 40 V and a continuous drain current of 35 A at 25 °C mounting base temperature. The device exhibits a typical drain-source on-state resistance of 9 mΩ at VGS = 10 V and ID = 10 A. Total power dissipation reaches 50 W under specified conditions. The component operates within a junction temperature range of -55 °C to +175 °C and includes repetitive avalanche rating capabilities.

Feature Summary

Fully automotive qualified to AEC-Q101 standards for high performance applications
Trench 9 superjunction technology provides low power losses and high power density
LFPAK copper clip package ensures high robustness, reliability, and thermal performance
Repetitive avalanche rated for enhanced ruggedness in demanding environments

Applications

12 V automotive systems
Powertrain, chassis, body and infotainment applications
Medium/Low power motor drive
DC-DC systems
LED lighting

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm exact packaging configuration and reel specifications. Ensure compatibility with LFPAK33 (SOT1210) footprint requirements during PCB design. Confirm that the selected variant meets all AEC-Q101 qualification criteria required for the target automotive application environment.

Selection Notes

Select this component for designs requiring logic level gate drive compatibility with low gate-source threshold voltages. The LFPAK33 package offers a compact solution suitable for space-constrained automotive boards. Evaluate thermal management strategies based on the 50 W total power dissipation limit and junction-to-mounting base thermal resistance characteristics.

Part Context

This device belongs to the Nexperia BUK9M series of N-channel MOSFETs designed for automotive use. It employs Trench 9 technology to achieve superior conduction and switching performance compared to previous generations. The LFPAK33 package integrates a copper clip for improved heat dissipation and electrical conductivity, supporting high-current applications in modern vehicle architectures.