BUK9M13-80LX

$1.61

Description：BUK9M13-80L/SOT1210/MLFPAK
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:68d0241da128 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：BUK9M13-80L/SOT1210/MLFPAK
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：55A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：12.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：2.05V @ 120µA
Gate Charge (Qg) (Max) @ Vgs：51.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3341 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：91W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：LFPAK33
Package / Case：SOT-1210, 8-LFPAK33 (5-Lead)

Download product information

BUK9M13-80LX

Overview

The BUK9M13-80L is a logic level N-channel MOSFET in an LFPAK33 (SOT1210) package using TrenchMOS technology. It is automotive qualified to AEC-Q101 at 175 °C. Key electrical parameters include a drain-source voltage of 80 V, continuous drain current of 55 A, and total power dissipation of 91 W. The typical drain-source on-state resistance is 10.6 mΩ at VGS = 10 V and ID = 15 A. Gate-drain charge is typically 3.8 nC, and the thermal resistance from junction to mounting base is 1.4 K/W.

Feature Summary

Logic-level compatible with Trench12 MOSFET technology for efficient switching and soft body-diode recovery.
Automotive qualified to AEC-Q101 standard at 175 °C for high performance applications.
Side-wettable flanks enable robust solder joints and facilitate automatic optical inspection.

Applications

12 V, 24 V and 48 V automotive systems
Motors, lamps and solenoid control
Transmission control
LED lighting
Circuit protection

Procurement Notes

Verify the specific ordering suffix matches the required package variant. Confirm that the component status aligns with development or production phases as defined in the datasheet. Ensure design compliance with absolute maximum ratings to prevent permanent damage. Check for any updates to the product specification or legal disclaimers before finalizing procurement plans.

Selection Notes

Select this device for designs requiring logic-level gate drive compatibility and low on-state resistance. Consider the LFPAK33 package for its thermal performance and side-wettable flanks suitable for automated assembly. Evaluate the 80 V rating and 55 A current capability against system load requirements. Verify suitability for automotive environments given the AEC-Q101 qualification.

Part Context

This component belongs to Nexperia's portfolio of logic level N-channel MOSFETs utilizing TrenchMOS technology. It is designed for high-performance automotive applications, offering a balance of low conduction losses and robust thermal characteristics within a compact surface-mount package.