BUK9M15-60EX

$0.88

Description：MOSFET N-CH 60V 47A LFPAK33
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:f58574d7f07c Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 47A LFPAK33
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：47A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：13mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.45V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：17 nC @ 5 V
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：2230 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：75W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：LFPAK33
Package / Case：SOT-1210, 8-LFPAK33 (5-Lead)

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BUK9M15-60EX

Overview

The BUK9M15-60EX is an N-channel logic level MOSFET utilizing TrenchMOS technology, housed in an LFPAK33 (SOT1210) package. It features a drain-source voltage of 60 V and a maximum continuous drain current of 47 A at 25 °C mounting base temperature. The device exhibits a typical on-state resistance of 12.5 mΩ at VGS = 5 V and ID = 10 A. Total power dissipation reaches 75 W under specified conditions. The component supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.

Feature Summary

Compliant with the AEC Q101 standard for automotive applications
Features true logic level gate operation with threshold voltage greater than 0.5 V at 175 °C
Suitable for thermally demanding environments due to 175 °C junction temperature rating
Repetitive avalanche rated for robust performance

Applications

12 V automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm exact packaging configuration. Confirm that the requested part number matches the LFPAK33 package variant. Ensure compliance with RoHS directives and REACH SVHC requirements as stated in the product data sheet before finalizing procurement specifications.

Selection Notes

Select this component for designs requiring low on-state resistance and high current handling in compact surface-mount layouts. The logic level gate drive allows direct interfacing with standard microcontrollers or drivers without additional level shifting circuitry. Consider the thermal resistance characteristics when designing heat dissipation strategies for high-power applications.

Part Context

This device belongs to the Nexperia BUK9M series of power MOSFETs designed for automotive and industrial markets. It employs TrenchMOS technology to achieve superior performance metrics within the LFPAK33 footprint. The series is engineered to meet stringent automotive reliability standards while providing efficient power switching solutions.