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Product Detailed Parameters
- Description：MOSFET N-CH 80V 33A LFPAK33
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：25mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：16.7 nC @ 5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：2275 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：75W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK33
- Package / Case：SOT-1210, 8-LFPAK33 (5-Lead)
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Overview
The BUK9M28-80EX is a logic level N-channel MOSFET in an LFPAK33 (SOT1210) package using TrenchMOS technology. It features a drain-source voltage of 80 V and a maximum on-state resistance of 28 mΩ at VGS=5V and ID=10A. The device supports a continuous drain current of 33 A at 25°C mounting base temperature, with a total power dissipation of 75 W. It is qualified to AEC-Q101 standards for automotive applications and operates up to a junction temperature of 175°C.
Feature Summary
- Qualified to AEC-Q101 standard for high performance automotive applications
- Repetitive avalanche rated for rugged operation
- Suitable for thermally demanding environments due to 175 °C rating
- True logic level gate with VGS(th) rating greater than 0.5 V at 175 °C
Applications
- 12 V, 24 V and 48 V automotive systems
- Motors, lamps and solenoid control
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix 'EX' against the manufacturer's official documentation to confirm packaging details such as reel size or tape specifications. Ensure the component matches the LFPAK33 (SOT1210) package outline and marking code 92880E. Confirm that the AEC-Q101 qualification status meets the specific reliability requirements of the target application before finalizing procurement.
Selection Notes
Select this component for designs requiring low conduction losses and logic-level gate drive compatibility in automotive environments. The 28 mΩ RDS(on) at 5 V gate drive makes it suitable for efficient power switching where standard gate voltages are available. Consider the thermal resistance and power dissipation limits when designing heat sinks or PCB copper areas for sustained high-current operations.
Part Context
This part belongs to Nexperia's TrenchMOS family of N-channel MOSFETs designed for automotive use. It utilizes advanced trench gate technology to achieve low on-resistance within a compact surface-mount package. The LFPAK33 package provides enhanced thermal performance compared to traditional plastic packages, supporting higher power densities in space-constrained automotive electronics.
Replacement Considerations
Check for direct substitutes within the BUK9M series or other Nexperia parts with similar 80 V, ~28 mΩ specifications in the SOT1210 package. Verify pinout compatibility and thermal characteristics if replacing with devices from other manufacturers.
