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Product Detailed Parameters
- Description：MOSFET N-CH 100V 29A LFPAK33
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：29A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：34mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：24.7 nC @ 5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：2844 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：79W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK33
- Package / Case：SOT-1210, 8-LFPAK33 (5-Lead)
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Overview
The BUK9M34-100EX is a single N-channel logic level MOSFET manufactured by Nexperia USA Inc., utilizing TrenchMOS technology within an LFPAK33 (SOT1210) surface-mount package. Designed for high-performance automotive applications, it meets the AEC-Q101 standard and supports junction temperatures up to 175 °C. Key electrical specifications include a drain-source voltage of 100 V, a continuous drain current of 29 A at 25 °C, and a maximum on-state resistance of 34 mΩ at VGS = 5 V. The device features repetitive avalanche rating capability and a total power dissipation capacity of 79 W.
Feature Summary
- AEC-Q101 qualified for automotive reliability standards
- Logic-level gate operation with low threshold voltage
- Repetitive avalanche rated for robust performance
- Suitable for thermally demanding environments
Applications
- 12 V, 24 V and 48 V automotive systems
- Motors, lamps and solenoid control
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging configuration. Confirm that the component matches the required AEC-Q101 qualification status for your target application. Cross-reference the marking code '93410E' with the datasheet to validate authenticity upon receipt. Ensure thermal management designs account for the specified mounting base temperature constraints.
Selection Notes
Select this component when designing circuits requiring a single N-channel switch with logic-level drive compatibility in a compact footprint. It is appropriate for applications needing high current handling up to 29 A and low conduction losses. Consider the LFPAK33 package for its thermal efficiency and suitability for automated optical inspection. Verify that the 100 V breakdown voltage aligns with the system's maximum operating voltages.
Part Context
This part belongs to Nexperia's portfolio of TrenchMOS silicon power MOSFETs designed for automotive and industrial markets. The LFPAK33 package provides a balance between power density and thermal performance. As a logic-level device, it simplifies gate driver requirements compared to standard threshold variants. The product line emphasizes durability and efficiency for modern vehicle electrical architectures.
Replacement Considerations
Consult the official Nexperia replacement guide or datasheet cross-reference section for verified substitute part numbers. Do not assume functional equivalence based solely on pinout or voltage ratings. Verify that any alternative component meets the same AEC-Q101 qualification and thermal characteristics.
