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Product Detailed Parameters
- Description：MOSFET N-CH 80V 26A LFPAK33
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：31mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：13.5 nC @ 5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：1804 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：62W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK33
- Package / Case：SOT-1210, 8-LFPAK33 (5-Lead)
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Overview
The BUK9M35-80EX is a logic level N-channel MOSFET utilizing TrenchMOS technology, housed in an LFPAK33 (SOT1210) package. It features a drain-source voltage of 80 V and a continuous drain current of 26 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 35 mΩ at VGS = 5 V and ID = 5 A. Total power dissipation reaches 62 W under specified conditions. The component supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.
Feature Summary
- Qualified to the AEC Q101 standard for high-performance automotive applications
- Features true logic level gate operation with threshold voltage greater than 0.5 V at 175 °C
- Rated for repetitive avalanche energy to withstand demanding electrical stress
- Designed for thermally demanding environments with a 175 °C operating limit
Applications
- 12 V, 24 V and 48 V automotive systems
- Motors, lamps and solenoid control
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific suffix 'EX' against official Nexperia documentation to confirm packaging details such as reel specifications or tape-and-reel dimensions. Ensure the ordering code matches the required quantity format. Confirm RoHS compliance status through the manufacturer's latest product change notices. Cross-reference the datasheet revision date with your design requirements to ensure parameter stability.
Selection Notes
Select this component when low gate drive voltage compatibility is required alongside high current handling. The logic level gate ensures full enhancement at 5 V, simplifying driver circuitry. Consider the thermal resistance from junction to mounting base for heat sink sizing. Verify that the application's peak current pulses remain within the single-pulse avalanche and safe operating area limits defined in the datasheet.
Part Context
This device belongs to Nexperia's portfolio of automotive-grade power MOSFETs designed for robustness in electric and hybrid vehicles. The LFPAK33 package provides efficient thermal transfer via a dedicated mounting base connected to the drain. It utilizes advanced TrenchMOS technology to achieve low conduction losses while maintaining high reliability standards required for critical vehicle subsystems.
Replacement Considerations
Check for direct cross-reference part numbers listed in Nexperia's replacement guides. Verify pinout compatibility, specifically the source-drain-gate arrangement in the SOT1210 footprint. Ensure substitute devices meet or exceed the 80 V breakdown voltage and 35 mΩ maximum on-resistance specifications.
