BUK9M3R3-40HX

$1.07

Description：MOSFET N-CH 40V 80A LFPAK33
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:008561ab683d Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 80A LFPAK33
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：3.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：55 nC @ 10 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：3766 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：101W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：LFPAK33
Package / Case：SOT-1210, 8-LFPAK33 (5-Lead)

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BUK9M3R3-40HX

Overview

The BUK9M3R3-40H is an automotive qualified N-channel logic level MOSFET utilizing Trench 9 superjunction technology in an LFPAK33 (SOT1210) package. It features a drain-source voltage of 40 V and a maximum on-state resistance of 3.3 mΩ at VGS = 10 V and ID = 25 A. The device supports a continuous drain current of 80 A and total power dissipation of 101 W at 25 °C mounting base temperature. Key dynamic parameters include a typical gate-drain charge of 4.1 nC and a softness factor of 0.67 for the source-drain diode.

Feature Summary

Fully automotive qualified to AEC-Q101 standards with operation up to 175 °C junction temperature.
Trench 9 superjunction technology provides low power losses and high power density.
LFPAK copper clip package ensures high robustness, reliability, and gull wing leads for manufacturability.
Repetitive avalanche rated for enhanced ruggedness in demanding switching applications.

Applications

12 V automotive systems
Powertrain, chassis, body and infotainment applications
Medium/Low power motor drive
DC-DC systems
LED lighting

Procurement Notes

Verify the specific part number BUK9M3R3-40H against the official Nexperia datasheet to confirm the LFPAK33 package and AEC-Q101 qualification status. Ensure design requirements align with the absolute maximum ratings, particularly the 40 V drain-source voltage and 175 °C junction temperature limits. Confirm that thermal management strategies account for the specified thermal resistance from junction to mounting base.

Selection Notes

Select this component for high-performance automotive applications requiring low conduction losses and high current handling in a compact surface-mount footprint. The logic level gate drive capability allows efficient control with standard 4.5 V or 10 V drivers. Consider the repetitive avalanche rating and robust source-drain diode characteristics when designing circuits subject to inductive load switching or transient events.

Part Context

This device belongs to Nexperia's portfolio of automotive-grade power MOSFETs designed for efficiency and reliability. It utilizes advanced Trench 9 superjunction technology to minimize on-resistance while maintaining high breakdown voltage capabilities. The LFPAK33 package integrates copper clip technology to enhance thermal performance and mechanical stability compared to traditional plastic packages.

Replacement Considerations

Consult official Nexperia documentation for verified substitute part numbers. Cross-reference pinouts, electrical specifications, and package dimensions before implementation.