BUK9M52-40EX

$0.50

Description：MOSFET N-CH 40V 17.6A LFPAK33
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:03e875ae72da Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 17.6A LFPAK33
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：17.6A (Tj)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：40mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：4.5 nC @ 5 V
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：407 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：31W
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：LFPAK33
Package / Case：SOT-1210, 8-LFPAK33 (5-Lead)

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BUK9M52-40EX

Overview

The Nexperia BUK9M52-40EX is a logic level N-channel MOSFET utilizing TrenchMOS technology, housed in an LFPAK33 (SOT1210) surface-mount package. It features a drain-source voltage of 40 V and a continuous drain current of 17.6 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 52 mΩ at VGS = 5 V and ID = 5 A. Designed for high-performance automotive applications, it meets the AEC-Q101 standard and supports junction temperatures up to 175 °C.

Feature Summary

AEC-Q101 qualified for high-performance automotive environments
True logic level gate operation with threshold voltage greater than 0.5 V at 175 °C
Repetitive avalanche rated for robust switching performance
Suitable for thermally demanding applications due to 175 °C rating

Applications

12 V automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm exact packaging configuration. Confirm that the component matches the required AEC-Q101 qualification status for your target application. Ensure thermal management designs account for the specified junction-to-mounting base thermal resistance values provided in the datasheet.

Selection Notes

Select this component when a single N-channel MOSFET with low on-resistance is required for 40 V logic-level drive applications. The LFPAK33 package offers a compact footprint suitable for space-constrained PCB layouts. Consider the repetitive avalanche rating if the circuit experiences inductive load switching or transient voltage spikes.

Part Context

This device belongs to the Nexperia BUK9M series of logic level MOSFETs designed for automotive use. It employs TrenchMOS technology to achieve low on-state resistance within the LFPAK33 plastic surface-mounted package. The series is engineered to meet stringent automotive reliability standards while providing efficient power switching capabilities.

Replacement Considerations

Consult official Nexperia cross-reference tools for verified substitutes. Ensure any replacement maintains the same LFPAK33 pinout and meets AEC-Q101 requirements if automotive qualification is mandatory.