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Product Detailed Parameters
- Description：MOSFET N-CH 30V 70A LFPAK33
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：5.3mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：18 nC @ 5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：2001 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：75W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK33
- Package / Case：SOT-1210, 8-LFPAK33 (5-Lead)
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Overview
The Nexperia BUK9M6R6-30EX is a logic level N-channel MOSFET utilizing TrenchMOS technology within an LFPAK33 (SOT1210) package. It features a drain-source voltage of 30 V and a continuous drain current of 70 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 6.6 mΩ at VGS = 5 V and ID = 20 A, with a typical value of 5.5 mΩ. Total power dissipation reaches 75 W at 25 °C. It operates across a junction temperature range of -55 °C to +175 °C and includes repetitive avalanche rating capabilities.
Feature Summary
- Qualified to AEC-Q101 automotive standards for high-performance applications
- Capable of handling thermally demanding environments with a 175 °C junction temperature rating
- Features true logic level gate drive characteristics maintaining threshold voltage above 0.5 V at elevated temperatures
Applications
- 12 V automotive systems
- Motors, lamps and solenoid control
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details such as reel or cut tape specifications. Ensure component authenticity by checking marking codes and datasheet revisions. Confirm compliance requirements including RoHS and REACH status prior to integration into final designs.
Selection Notes
Select this component for designs requiring low conduction losses in automotive environments. The logic level gate drive allows compatibility with standard microcontroller outputs without additional driver stages. Evaluate thermal management strategies to maintain junction temperatures within the specified operational limits during peak load conditions.
Part Context
This device belongs to the Nexperia BUK9M series of N-channel MOSFETs designed for automotive use. It employs TrenchMOS technology to achieve low on-resistance and efficient switching performance. The LFPAK33 package provides robust thermal dissipation capabilities suitable for surface mount assembly processes.
Replacement Considerations
Consult official Nexperia substitution guides for verified alternatives. Cross-reference pinout configurations and electrical parameters carefully when considering equivalent components from other manufacturers.
