BUK9M6R7-40HX

Overview

The Nexperia BUK9M6R7-40HX is an automotive qualified logic level N-channel MOSFET utilizing Trench 9 superjunction technology. It features a 40 V drain-source voltage rating and a maximum continuous drain current of 50 A at a mounting base temperature of 25 °C. The device exhibits a typical drain-source on-state resistance of 5.5 mΩ at VGS = 10 V and ID = 20 A, with a maximum of 6.7 mΩ. Total power dissipation reaches 65 W at 25 °C. Operating junction temperatures range from -55 °C to +175 °C. The component is housed in an LFPAK33 (SOT1210) package.

Feature Summary

• Fully automotive qualified to AEC-Q101 standards for high performance applications
• Trench 9 superjunction technology provides low power losses and high power density
• LFPAK copper clip package ensures high robustness and reliability
• Repetitive avalanche rated for enhanced ruggedness

Applications

• 12 V automotive systems
• Powertrain, chassis, body and infotainment applications
• Medium/Low power motor drive
• DC-DC systems
• LED lighting

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact packaging configuration. Confirm that the delivered components match the required AEC-Q101 qualification status. Ensure compatibility with the specified LFPAK33 footprint dimensions during PCB layout. Validate thermal management designs against the provided junction-to-mounting base thermal resistance data.

Selection Notes

Select this component for designs requiring automotive-grade reliability and high current handling within a compact surface mount form factor. The logic level gate threshold supports direct driving from standard microcontrollers or drivers without additional level shifting circuitry. Evaluate thermal constraints carefully, as practical current limits are often dictated by PCB copper area and operating temperature rather than absolute maximum ratings alone.

Part Context

This device belongs to Nexperia's BUK9 series of N-channel MOSFETs designed for automotive environments. It employs advanced Trench 9 TrenchMOS technology to achieve superior performance metrics compared to previous generations. The LFPAK33 package variant offers optimized thermal dissipation capabilities suitable for demanding power switching applications in vehicle electronics.

Replacement Considerations

BUK9Y3R5-40E

FAQ

What is the maximum repetitive avalanche energy rating?

The non-repetitive drain-source avalanche energy rating is 28 mJ under conditions of ID = 50 A, Vsup ≤ 40 V, RGS = 50 Ω, VGS = 10 V, and initial junction temperature of 25 °C.

How does the gate-source threshold voltage vary with temperature?

The gate-source threshold voltage decreases as junction temperature increases. At 25 °C, it ranges from 1.45 V to 2.15 V, while at 175 °C, the maximum value drops to approximately 0.7 V.