BUK9M9R1-40EX

Overview

The Nexperia BUK9M9R1-40EX is an N-channel logic level MOSFET utilizing TrenchMOS technology, housed in an LFPAK33 (SOT1210) surface-mount package. It features a drain-source voltage of 40 V and a maximum continuous drain current of 64 A at 25 °C mounting base temperature. The device exhibits a typical on-state resistance of 7.5 mΩ at VGS = 5 V and ID = 20 A. Total power dissipation reaches 75 W under specified conditions. It supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.

Feature Summary

• Qualified for automotive applications according to the AEC-Q101 standard
• Capable of operating in thermally demanding environments with a 175 °C junction temperature rating
• Features true logic level gate characteristics with a threshold voltage greater than 0.5 V at elevated temperatures
• Rated for repetitive avalanche energy operation

Applications

• 12 V automotive systems
• Motors, lamps and solenoid control
• Transmission control
• Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets all required automotive qualification standards for the intended application environment. Cross-reference the marking code with the datasheet to validate authenticity upon receipt.

Selection Notes

Select this component for designs requiring low on-state resistance within a compact surface-mount footprint. The logic level gate drive capability allows for direct interfacing with standard microcontrollers or drivers without additional level shifting circuitry. Ensure thermal management strategies account for the specified power dissipation limits at the expected mounting base temperatures.

Part Context

This part belongs to the BUK9M series of N-channel MOSFETs from Nexperia. The series utilizes TrenchMOS technology to achieve low RDS(on) values. The LFPAK33 package provides robust thermal performance and mechanical reliability suitable for high-power density applications. The product is designed specifically for high-performance automotive electronics.

Replacement Considerations

BUK9M9R1-40E

FAQ

What is the gate-source threshold voltage at high temperatures?

The gate-source threshold voltage remains greater than 0.5 V at a junction temperature of 175 °C.

Is the device rated for avalanche operations?

Yes, the BUK9M9R1-40EX is repetitively avalanche rated.