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Product Detailed Parameters
- Description：MOSFET N-CH 30V 59A LFPAK56
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：59A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：9mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：16.5 nC @ 5 V
- Vgs (Max)：±15V
- Input Capacitance (Ciss) (Max) @ Vds：1614 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：75W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK56, Power-SO8
- Package / Case：SC-100, SOT-669
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Overview
The BUK9Y11-30B,115 is an N-channel enhancement mode power FET utilizing Nexperia High-Performance Automotive TrenchMOS technology. It features a drain-source voltage of 30 V and a continuous drain current of 59 A at 25 °C mounting base temperature. The typical on-state resistance is 9.3 mΩ at VGS = 5 V and ID = 25 A. Total power dissipation reaches 75 W at 25 °C. The device operates within a junction temperature range of -55 °C to +175 °C and includes a non-repetitive avalanche energy rating of 112 mJ.
Feature Summary
- Logic level compatible for direct drive from standard logic interfaces
- Qualified to AEC-Q101 automotive standards for critical applications
- Rated for operation in thermally demanding environments up to 175 °C
Applications
- Automotive systems
- General purpose power switching
- Motor control circuits
- Lamp driving
- Solenoid actuation
- 12 V load management
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component when designing circuits requiring robust automotive-grade switching with low conduction losses. The logic-level gate drive capability simplifies driver design for 12 V systems. Ensure thermal management strategies account for the 2 K/W junction-to-mounting-base thermal resistance to maintain reliability under high current loads.
Part Context
This part belongs to the BUK9Y series of N-channel TrenchMOS logic level FETs. These devices are engineered using High-Performance Automotive technology to meet stringent industry reliability standards. The LFPAK package provides efficient heat dissipation through a large mounting base connected directly to the drain terminal.
Replacement Considerations
Check datasheets for alternative parts offering similar 30 V ratings and comparable RDS(on) values. Verify that any substitute maintains AEC-Q101 qualification if used in automotive contexts. Confirm pinout compatibility with the SOT669 (LFPAK) footprint before integration.
