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Product Detailed Parameters
- Description：MOSFET N-CH 80V LFPAK56 PWR-SO8
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK56, Power-SO8
- Package / Case：SC-100, SOT-669
Download product information
Overview
The BUK9Y12-80E,115 is an N-channel TrenchMOS logic level field-effect transistor manufactured by Nexperia. It utilizes High Performance Automotive (HPA) TrenchMOS technology and is designed for automotive critical applications. The device features a low on-state resistance to minimize conduction losses and supports logic-level gate drive sources. It is qualified to AEC-Q101 standards and rated for operation in thermally demanding environments up to 175°C.
Feature Summary
- Logic-level compatible gate drive capability
- Automotive qualification compliant with AEC-Q101
- Optimized for high thermal performance
Applications
- Air bag systems
- Automotive ABS systems
- Diesel injection systems
- Fuel pump and injection control
- Motor, lamp, and solenoid switching
Procurement Notes
Verify the specific part number against official Nexperia documentation to confirm current production status and availability. Ensure that the selected component meets the required AEC-Q101 automotive qualification standards for your target application environment. Cross-reference datasheet parameters such as voltage ratings and package dimensions prior to finalizing procurement decisions.
Selection Notes
Select this component for designs requiring robust automotive-grade reliability and efficient power switching. The logic-level compatibility simplifies driver circuit design, while the high temperature rating ensures stability in harsh under-hood conditions. Evaluate thermal management requirements based on the specific package dissipation capabilities outlined in the official datasheet.
Part Context
This device belongs to Nexperia's BUK9Y series of N-channel TrenchMOS transistors. The series is engineered specifically for automotive applications, combining low on-resistance with high thermal endurance. The HPA TrenchMOS technology provides a balance of performance and durability suitable for critical vehicle systems.
Replacement Considerations
Consult official Nexperia substitution guides or distributor cross-reference tools for verified equivalent parts. Do not assume functional interchangeability with other MOSFETs without confirming matching electrical characteristics and package compatibility.
