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The BUK9Y13-60ELX is a single N-channel logic level MOSFET from Nexperia, housed in an LFPAK56 (SOT669) package. It utilizes Application Specific Field Effect Transistor (ASFET) Enhanced Safe Operating Area (SOA) technology. The device features a drain-source voltage of 60 V and a maximum continuous drain current of 90 A at 25 °C mounting base temperature. The typical drain-source on-state resistance is 7.9 mΩ at VGS = 10 V and ID = 20 A. Total power dissipation reaches 147 W under specified conditions.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as reel or cut tape configuration. Confirm that the component meets all required automotive qualification standards for the intended application environment before finalizing procurement decisions.
Select this component when designing circuits requiring high current handling within a compact surface-mount footprint. The enhanced SOA technology makes it suitable for applications demanding reliable linear mode operation. Ensure thermal management aligns with the specified junction temperature limits for optimal performance.
This part belongs to Nexperia's automotive-grade MOSFET portfolio, specifically designed for high-reliability environments. It integrates advanced silicon technologies into a standardized LFPAK56 package, balancing electrical performance with mechanical robustness for modern vehicle electronic architectures.
BUK9Y13-60EL
Yes, the device incorporates Enhanced SOA technology specifically designed to improve linear mode performance.
The maximum operating junction temperature is 175 °C.