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Product Detailed Parameters
- Description：MOSFET N-CH 40V 56A LFPAK56
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：56A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：11mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：21 nC @ 5 V
- Vgs (Max)：±15V
- Input Capacitance (Ciss) (Max) @ Vds：1800 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：85W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK56, Power-SO8
- Package / Case：SC-100, SOT-669
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Overview
The Nexperia BUK9Y14-40B,115 is a logic level N-channel enhancement mode Field-Effect Transistor utilizing High Performance Automotive (HPA) TrenchMOS technology. It features a drain-source voltage of 40 V and a continuous drain current of 56 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 14 mΩ at VGS = 5 V and ID = 20 A. Total power dissipation reaches 85 W under standard conditions. It supports junction temperatures up to 175 °C and includes avalanche ruggedness with non-repetitive energy handling of 89 mJ.
Feature Summary
- Compliant with AEC-Q101 automotive standards for critical applications
- Optimized for low conduction losses through minimized on-state resistance
- Compatible with logic level gate drive sources for simplified control
- Designed for thermally demanding environments with high junction temperature rating
Applications
- Air bag systems
- Automotive ABS systems
- Diesel injection systems
- Motors, lamps and solenoids
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component when designing circuits requiring automotive-grade reliability and logic-level compatibility. The LFPAK package offers efficient thermal management for high-current switching. Ensure gate drive voltages align with the specified threshold characteristics for optimal performance in engine control or body electronics modules.
Part Context
This device belongs to Nexperia's BUK9Y series of N-channel TrenchMOS FETs. It is housed in the SOT669 (LFPAK) plastic surface-mounted package. The series is engineered specifically for high-performance automotive applications, balancing low static resistance with robust dynamic capabilities and thermal stability.
Replacement Considerations
Consult official Nexperia documentation for qualified substitutes. Verify pinout compatibility and electrical parameters such as RDS(on) and VDS before integration.
