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Product Detailed Parameters
- Description：MOSFET N-CH 80V 62A LFPAK56
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：62A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：14mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：28.9 nC @ 5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：4640 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：147W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK56, Power-SO8
- Package / Case：SC-100, SOT-669
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Overview
The BUK9Y14-80E,115 is a logic level N-channel MOSFET utilizing TrenchMOS technology in an LFPAK56 (Power SO8) package. It features an 80 V drain-source voltage rating and a maximum continuous drain current of 62 A at a mounting base temperature of 25 °C. The device exhibits a typical on-state resistance of 12.2 mΩ at VGS = 5 V and ID = 15 A. Total power dissipation reaches 147 W under specified conditions. The component supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.
Feature Summary
- Qualified to the AEC-Q101 standard for high-performance automotive applications
- Capable of operating in thermally demanding environments with a 175 °C rating
- Features true logic level gate characteristics with threshold voltage greater than 0.5 V at 175 °C
- Rated for repetitive avalanche energy operation
Applications
- 12 V, 24 V and 48 V Automotive systems
- Motors, lamps and solenoid control
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component when designing circuits requiring low conduction losses and robust thermal performance in automotive environments. The logic level gate drive compatibility simplifies interface design with standard controllers. Ensure adequate heat sinking is provided to maintain the mounting base temperature within limits for the required current load.
Part Context
This part belongs to Nexperia's BUK9Y series of N-channel MOSFETs designed for automotive use. It employs TrenchMOS technology to achieve low on-resistance and fast switching speeds. The LFPAK56 package provides efficient thermal transfer through a dedicated mounting base connected to the drain terminal.
Replacement Considerations
Direct replacements must match the 80 V rating, LFPAK56 package, and logic level gate requirements. Verify that any substitute component meets AEC-Q101 standards if automotive qualification is mandatory. Check pinout compatibility and thermal resistance specifications.
