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Product Detailed Parameters
- Description：MOSFET N-CH 60V 53A LFPAK56
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：53A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：13mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：17.2 nC @ 5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：2603 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：95W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK56, Power-SO8
- Package / Case：SC-100, SOT-669
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Overview
The BUK9Y15-60E is a logic level N-channel MOSFET utilizing TrenchMOS technology in an LFPAK56 (Power SO8) package. It is qualified to the AEC-Q101 standard for automotive applications. Key electrical parameters include a drain-source voltage of 60 V, a continuous drain current of 53 A at 25 °C mounting base temperature, and a total power dissipation of 95 W. The device features a maximum on-state resistance of 15 mΩ at VGS = 5 V and ID = 15 A. It supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.
Feature Summary
- Qualified to AEC-Q101 standard for high performance automotive applications
- Repetitive avalanche rated for robust operation
- Suitable for thermally demanding environments with a 175 °C rating
- True logic level gate with threshold voltage greater than 0.5 V at 175 °C
Applications
- 12 V Automotive systems
- Motors, lamps and solenoid control
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix matches the required tape and reel configuration. Confirm that the component status aligns with production requirements rather than development or preliminary stages. Ensure compliance with RoHS and REACH directives as specified in the datasheet. Check for any recent updates to the product specification or marking codes before finalizing procurement documentation.
Selection Notes
Select this component when automotive qualification and high thermal stability are required. The low on-state resistance minimizes conduction losses in power switching applications. The logic level gate drive capability allows direct interfacing with standard microcontrollers without additional level shifting circuitry. Consider the thermal resistance characteristics for heat sink design in confined spaces.
Part Context
This part belongs to Nexperia's BUK9Y series of High Performance Automotive (HPA) TrenchMOS logic level FETs. These devices are designed specifically for critical automotive applications requiring high reliability and ruggedness. The LFPAK56 package provides excellent thermal performance and mechanical stability compared to traditional plastic packages.
Replacement Considerations
Direct replacements must match the 60 V rating, 15 mΩ RDS(on) max, and SOT669/LFPAK56 package. Verify pinout compatibility and ensure the substitute also holds AEC-Q101 qualification if used in automotive contexts. Check thermal resistance values to maintain equivalent heat dissipation capabilities.
