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Product Detailed Parameters
- Description：MOSFET N-CH 100V 9.4A LFPAK56
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：9.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：146mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：6.8 nC @ 5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：716 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：37W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK56, Power-SO8
- Package / Case：SC-100, SOT-669
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Overview
The BUK9Y153-100E is a logic level N-channel MOSFET utilizing TrenchMOS technology, housed in an LFPAK56 (Power SO8) package. It features a drain-source voltage of 100 V and a maximum on-state resistance of 153 mΩ at VGS = 5 V and ID = 2 A. The device supports a continuous drain current of 9.4 A at a mounting base temperature of 25 °C, with a total power dissipation rating of 37 W under the same conditions. It operates within a junction temperature range of -55 °C to +175 °C and includes repetitive avalanche rating capabilities.
Feature Summary
- Compliant with AEC Q101 standards for automotive applications
- True logic level gate operation with threshold voltage greater than 0.5 V at 175 °C
- Suitable for thermally demanding environments due to 175 °C junction temperature rating
- Repetitive avalanche rated for robust performance
Applications
- 12 V, 24 V and 48 V Automotive systems
- Motors, lamps and solenoid control
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component when low gate drive voltage compatibility is required alongside moderate current handling in automotive contexts. The LFPAK56 package provides efficient thermal management through the mounting base connection. Ensure the application accounts for the 153 mΩ on-state resistance limits at higher temperatures or currents to maintain efficiency within design parameters.
Part Context
This part belongs to Nexperia's BUK9Y series of N-channel MOSFETs designed for high-performance automotive use. It employs TrenchMOS technology to achieve logic-level gate drive characteristics. The device is specifically qualified to AEC-Q101 standards, distinguishing it from general-purpose industrial transistors by its enhanced reliability and ruggedness requirements for vehicle electronics.
Replacement Considerations
Direct substitutes must match the 100 V rating, LFPAK56/SOT669 package, and similar RDS(on) specifications. Verify that any replacement also holds AEC-Q101 qualification if used in automotive circuits. Check pinout compatibility, as the mounting base connects to the drain.
