BUK9Y19-55B/C2,115

$0.51

Description：MOSFET N-CH 55V 46A LFPAK56
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR)

SKU:eb6909715d26 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 55V 46A LFPAK56
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：46A
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：17.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：18 nC @ 5 V
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：1992 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：LFPAK56, Power-SO8
Package / Case：SC-100, SOT-669

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BUK9Y19-55B/C2,115

Overview

The BUK9Y19-55B/C2,115 is a logic level N-channel enhancement mode power FET utilizing Nexperia High-Performance Automotive TrenchMOS technology. It features a maximum drain-source voltage of 55 V and a continuous drain current of 46 A at 25 °C mounting base temperature. The device exhibits a typical on-state resistance of 16.3 mΩ at VGS=5V and ID=20A. It supports a total power dissipation of 85 W and operates with junction temperatures up to 175 °C. The component is qualified to AEC-Q101 standards for automotive applications.

Feature Summary

Logic level compatible gate drive requirements
Very low on-state resistance for reduced conduction losses
Rated for thermally demanding environments up to 175 °C
Qualified to AEC-Q101 standard for automotive critical applications

Applications

12 V and 24 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids

Procurement Notes

Verify the specific ordering suffix /C2,115 against the manufacturer's current catalog to confirm availability and packaging details. Confirm that the LFPAK (SOT669) package dimensions match your PCB footprint requirements. Ensure design parameters remain within the absolute maximum ratings defined in the official datasheet to maintain reliability.

Selection Notes

Select this component when low on-state resistance is required for high-current switching applications. The logic level gate threshold allows direct driving from standard logic sources without additional gate drivers. Verify thermal management capabilities are sufficient for the expected mounting base temperature conditions during operation.

Part Context

This part belongs to the BUK9Y19 series of N-channel TrenchMOS logic level FETs. It is designed specifically for high-performance automotive applications requiring robustness and efficiency. The LFPAK package provides enhanced thermal performance compared to traditional plastic packages.