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Product Detailed Parameters
- Description：MOSFET N-CH 60V 34A LFPAK56
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：34A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：21.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：12 nC @ 5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：1500 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：65W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK56, Power-SO8
- Package / Case：SC-100, SOT-669
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Overview
The BUK9Y25-60E,115 is a logic level N-channel MOSFET utilizing TrenchMOS technology in an LFPAK56 (Power-SO8) package. It features a drain-source voltage of 60 V and a continuous drain current of 34 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 25 mΩ at VGS = 5 V and ID = 10 A. Qualified to the AEC-Q101 standard, it supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities for robust automotive operation.
Feature Summary
- AEC-Q101 qualified for high-performance automotive applications
- Logic level gate drive with threshold voltage greater than 0.5 V at 175 °C
- Repetitive avalanche rated for ruggedness
- Suitable for thermally demanding environments due to 175 °C junction temperature rating
Applications
- 12 V Automotive systems
- Motors, lamps and solenoid control
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component for designs requiring true logic level gate drive compatibility within automotive 12 V architectures. The LFPAK56 package provides efficient thermal dissipation suitable for mounting base temperatures up to 100 °C while maintaining specified current ratings. Ensure gate drive voltages align with the logic level specifications to achieve optimal on-state resistance performance across the operating temperature range.
Part Context
This device belongs to Nexperia's portfolio of TrenchMOS logic level N-channel MOSFETs designed specifically for automotive reliability standards. The LFPAK56 package variant offers a compact surface-mount footprint with a dedicated mounting base connected to the drain, facilitating effective heat transfer from the silicon junction to the PCB or heatsink infrastructure.
Replacement Considerations
Direct replacement requires matching the 60 V rating, LFPAK56 package outline (SOT669), and AEC-Q101 qualification status. Verify that substitute devices meet the same repetitive avalanche energy requirements and logic level gate threshold characteristics to ensure functional equivalence in existing circuit designs.
