ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 40V 34A LFPAK56
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：34A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：24mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：2.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：11 nC @ 5 V
- Vgs (Max)：±15V
- Input Capacitance (Ciss) (Max) @ Vds：959 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：59.4W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK56, Power-SO8
- Package / Case：SC-100, SOT-669
Download product information
Overview
The BUK9Y27-40B,115 is an N-channel TrenchMOS logic level enhancement mode Field-Effect Transistor (FET) manufactured by Nexperia. It utilizes TrenchMOS technology and is designed for automotive critical applications in compliance with AEC-Q101 standards. The device features a plastic LFPAK (SOT669) package with four leads. Key electrical parameters include a drain-source voltage of 40 V, a continuous drain current of 34 A at 25 °C mounting base temperature, and a total power dissipation of 59.4 W. The on-state resistance ranges from 18 mΩ to 27 mΩ depending on gate drive conditions.
Feature Summary
- Low conduction losses achieved through low on-state resistance characteristics
- Qualified according to AEC-Q101 standards for automotive critical applications
- Suitable for logic level gate drive sources
- Operates in thermally demanding environments with a 175 °C rating
Applications
- 12 V loads
- Automotive systems
- General purpose power switching
- Motors, lamps and solenoids
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component when designing circuits requiring robust N-channel switching with low on-resistance in compact packages. Ensure the gate drive voltage aligns with the logic level specifications to optimize RDS(on). Consider the thermal management requirements given the 175 °C junction temperature limit and the specific thermal resistance values provided in the datasheet for accurate heat sinking calculations.
Part Context
This part belongs to the Nexperia BUK9Y series of N-channel TrenchMOS logic level FETs. These devices are engineered using advanced trench technology to provide high performance in small surface-mount packages. The series is specifically targeted at automotive and industrial applications where reliability under harsh conditions and efficient power switching are critical design factors.
Replacement Considerations
Check pinout compatibility and electrical parameter margins against existing designs. Verify that any substitute maintains the SOT669 package dimensions and meets or exceeds the 40 V breakdown voltage and 34 A current ratings specified for the original component.
