BUK9Y2R4-40HX

Overview

The BUK9Y2R4-40HX is an automotive qualified N-channel MOSFET utilizing Trench 9 low ohmic superjunction technology within a robust LFPAK56 package. It meets AEC-Q101 requirements for high performance and endurance. Key electrical parameters include a drain-source voltage of 40 V, a continuous drain current of 120 A at 25 °C mounting base temperature, and a maximum total power dissipation of 163 W. The device features a typical drain-source on-state resistance of 2.4 mΩ at 25 °C. Dynamic characteristics include a total gate charge of 55.8 nC and a source-drain diode with a recovered charge of 24.9 nC.

Feature Summary

• Fully automotive qualified to AEC-Q101 standards with a 175 °C rating suitable for thermally demanding environments.
• Trench 9 Superjunction technology provides reduced cell pitch for enhanced power density, lower RDSon, improved SOA, and avalanche capability.
• LFPAK Gull Wing leads offer high board level reliability by absorbing mechanical stress during thermal cycling compared to traditional QFN packages.
• LFPAK copper clip technology improves reliability, reduces thermal and on-state resistance, and increases maximum current capability.

Applications

• 12 V automotive systems
• Motors, lamps and solenoid control
• Start-Stop micro-hybrid applications
• Transmission control
• Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as reel or cut tape specifications. Ensure the component matches the exact part number BUK9Y2R4-40HX for correct pinout and electrical characteristics. Cross-reference the marking code 92H440 for physical identification. Confirm compliance with RoHS and REACH directives as stated in the product data sheet before integration into production.

Selection Notes

Select this component for designs requiring high current handling and low conduction losses in automotive environments. The tight VGS(th) limits facilitate easy paralleling of MOSFETs for higher current applications. Consider the LFPAK56 package for its superior thermal performance and mechanical reliability under thermal cycling conditions. Evaluate the PCB layout to support the mounting base connection for optimal heat dissipation and current spreading capabilities.

Part Context

This device belongs to Nexperia's portfolio of automotive-grade power MOSFETs designed for critical applications. It utilizes advanced Trench 9 technology to achieve superior efficiency and ruggedness compared to standard TrenchMOS devices. The LFPAK56 package is engineered for high board-level reliability and ease of automated optical inspection, addressing the stringent demands of modern automotive electronics manufacturing.

Replacement Considerations

Direct substitutes must match the 40 V rating, 120 A current capacity, and LFPAK56 (SOT669) package. Verify that any alternative device also holds AEC-Q101 qualification and similar thermal resistance characteristics to ensure compatibility with existing thermal management designs without redesigning the footprint.

FAQ

What technology does the BUK9Y2R4-40HX use to improve performance?

It uses Trench 9 low ohmic superjunction technology, which reduces cell pitch to enhance power density and efficiency while providing improved safe operating area and avalanche capability.

How does the LFPAK56 package enhance reliability?

The LFPAK56 package features Gull Wing leads that absorb mechanical stress during thermal cycling, offering higher board-level reliability than traditional QFN packages, and includes copper clip technology for improved current spreading.

Is the device suitable for logic level gate drive?

Yes, it is a logic level MOSFET designed to be driven directly by logic sources, featuring tight VGS(th) limits that enable easy paralleling.