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Product Detailed Parameters
- Description：MOSFET N-CH 100V 30A LFPAK56
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：38mOhm @ 5A, 5V
- Vgs(th) (Max) @ Id：2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：21.6 nC @ 5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：2541 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：94.9W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK56, Power-SO8
- Package / Case：SC-100, SOT-669
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Overview
The BUK9Y38-100E,115 is a logic level N-channel MOSFET utilizing TrenchMOS technology in an LFPAK56 (SOT669) package. It features a drain-source voltage of 100 V and a continuous drain current of 30 A at 25 °C mounting base temperature. The typical on-state resistance is 31.3 mΩ at VGS = 5 V and ID = 5 A. Total power dissipation reaches 94.9 W. The device supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.
Feature Summary
- Qualified to AEC-Q101 standards for high-performance automotive applications
- Features true logic level gate operation with threshold voltage greater than 0.5 V at 175 °C
- Supports thermally demanding environments with a maximum junction temperature rating of 175 °C
- Rated for repetitive avalanche energy conditions
Applications
- 12 V, 24 V and 48 V Automotive systems
- Motors, lamps and solenoid control
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component when low gate drive voltage compatibility is required alongside high thermal resilience. The logic level gate ensures effective switching with standard drivers while maintaining performance at elevated temperatures. The LFPAK56 package provides efficient heat dissipation for space-constrained designs requiring robust power handling capabilities.
Part Context
This part belongs to Nexperia's TrenchMOS family, designed specifically for automotive reliability. It integrates advanced silicon technology within the SOT669 surface-mount package. The device targets applications needing durable power switching solutions that withstand harsh electrical and thermal conditions inherent in modern vehicle architectures.
Replacement Considerations
Check pinout compatibility and thermal resistance values when substituting. Ensure the replacement device meets AEC-Q101 requirements if used in automotive contexts. Verify that the new component's on-state resistance and gate charge characteristics align with the original design specifications.
FAQ
What is the maximum gate-source voltage rating?
The DC gate-source voltage is rated at 10 V, while the pulsed rating extends to 15 V.
Is the device suitable for high-temperature operation?
Yes, it is designed for thermally demanding environments with a maximum junction temperature of 175 °C.
