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Product Detailed Parameters
- Description：MOSFET N-CH 55V 26A LFPAK56
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：36mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：11 nC @ 5 V
- Vgs (Max)：±15V
- Input Capacitance (Ciss) (Max) @ Vds：1020 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：59W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK56, Power-SO8
- Package / Case：SC-100, SOT-669
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Overview
The BUK9Y40-55B,115 is a logic level N-channel enhancement mode Field-Effect Transistor utilizing Nexperia High-Performance Automotive TrenchMOS technology. It features a SOT669 (LFPAK) plastic surface-mounted package with four leads and a mounting base connected to the drain. The device supports a maximum drain-source voltage of 55 V and operates up to a junction temperature of 175 °C. Key electrical parameters include a typical on-state resistance of 34 mΩ at VGS=5V and ID=15A, a continuous drain current of 26 A at Tmb=25°C, and a total power dissipation of 59 W.
Feature Summary
- Logic level compatible for direct drive from standard logic interfaces
- Qualified to AEC-Q101 automotive standards for critical applications
- Rated for operation at junction temperatures up to 175 °C
- Designed with very low on-state resistance for high efficiency
Applications
- 12 V and 24 V load switching
- Automotive systems
- General purpose power switching
- Motors, lamps and solenoids
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component when designing circuits requiring robust automotive-grade N-channel MOSFETs capable of handling 55 V and moderate currents. The logic-level gate drive simplifies control circuitry design by allowing direct interfacing with common microcontrollers or logic gates without additional level shifting stages.
Part Context
This part belongs to Nexperia's BUK9Y series of High-Performance Automotive TrenchMOS FETs. These devices are engineered specifically for demanding automotive environments, offering improved thermal performance and ruggedness compared to standard industrial counterparts. The LFPAK package provides superior heat dissipation capabilities essential for power management in compact automotive modules.
Replacement Considerations
Check datasheets for alternative parts within the BUK9Y series or other Nexperia automotive MOSFETs that match the 55 V rating and SOT669 footprint. Ensure any substitute maintains AEC-Q101 qualification if required for the specific application environment.
