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The BUK9Y4R8-60RAX is a dual N-channel TrenchMOS logic-level MOSFET manufactured by Nexperia. It features a 60V drain-source voltage rating and a continuous drain current of 100A at case temperature. The device incorporates an integrated common source inductance (CSI) structure to optimize switching performance. Key electrical parameters include a maximum on-resistance of 4.8mΩ at 25°C and a gate charge of 73.1nC. It operates within a junction temperature range of -55°C to +175°C and utilizes the LFPAK56D surface-mount package.
Verify the specific suffix RAX against official Nexperia documentation to confirm tape-and-reel packaging specifications. Ensure compatibility with AEC-Q101 automotive qualification requirements if used in vehicle electronics. Cross-reference the exact part number with manufacturer datasheets to validate pinout and thermal characteristics before finalizing procurement orders.
Select this component for designs requiring high current handling in compact footprints. The dual configuration allows for parallel operation or half-bridge topologies. Evaluate thermal dissipation capabilities based on the LFPAK56D package constraints. Confirm that the 60V rating provides sufficient headroom for the target application's supply voltage.
This device belongs to the BUK9Y series, which focuses on high-current, low-resistance solutions for automotive and industrial markets. The series utilizes advanced trench gate technology to minimize conduction losses while maintaining robust switching characteristics suitable for demanding power conversion environments.
Consult official Nexperia substitution guides for verified alternatives. Generic cross-references may not match the integrated CSI architecture or specific thermal resistance values.