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Product Detailed Parameters
- Description：MOSFET N-CH 100V 23A LFPAK56
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：49mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：18 nC @ 5 V
- Vgs (Max)：±15V
- Input Capacitance (Ciss) (Max) @ Vds：2130 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：75W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK56, Power-SO8
- Package / Case：SC-100, SOT-669
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Overview
The BUK9Y53-100B,115 is an N-channel enhancement mode power Field-Effect Transistor utilizing Nexperia High-Performance Automotive TrenchMOS technology. It features a drain-source voltage of 100 V and continuous drain current up to 23 A at 25 °C. The device offers a typical on-state resistance of 45 mΩ at VGS=5V and ID=10A. Total power dissipation reaches 75 W with a junction temperature rating of 175 °C. Avalanche energy capability is specified at 85 mJ.
Feature Summary
- Logic level compatible for standard gate drive sources
- Compliant with AEC-Q101 automotive standards
- Rated for thermally demanding environments up to 175 °C
- Low on-state resistance for efficient power switching
Applications
- Automotive systems
- General purpose power switching
- Motors, lamps and solenoids
- 12 V, 24 V and 42 V loads
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component for designs requiring logic-level gate compatibility and high thermal resilience in automotive or industrial contexts. The LFPAK package provides effective heat dissipation for power switching applications. Ensure gate drive voltages align with the logic level specifications to optimize on-state performance and minimize conduction losses during operation.
Part Context
This part belongs to the BUK9Y series of N-channel TrenchMOS logic level FETs from Nexperia. It is housed in the SOT669 (LFPAK) plastic surface-mounted package. The device is designed for robust performance in critical automotive applications, leveraging advanced trench technology to achieve low resistance and high reliability under varying thermal conditions.
Replacement Considerations
Consult official Nexperia documentation for verified substitutes. Cross-reference pinout configurations and electrical limits when evaluating alternatives to ensure compatibility with existing circuit designs and thermal management requirements.
