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The BUK9Y8R8-60EL is a single N-channel logic level MOSFET from Nexperia, housed in an LFPAK56 (SOT669) package. It features Enhanced SOA technology and is qualified to AEC-Q101 standards for automotive use. Key electrical parameters include a drain-source voltage of 60 V and a maximum continuous drain current of 110 A at 25 °C mounting base temperature. The typical on-state resistance is 5.6 mΩ at VGS = 10 V and ID = 25 A. Total power dissipation reaches 194 W under specified conditions.
Verify the specific ordering code against the manufacturer's latest documentation to ensure correct package variant and marking. Confirm that the application design accounts for thermal limitations imposed by PCB layout and operating temperatures, as continuous current ratings are dependent on these external factors rather than device limits alone.
Select this component for applications requiring high current handling in a compact surface-mount footprint. The logic level gate drive capability allows compatibility with standard control interfaces. Ensure the design supports the required thermal management, as performance is heavily influenced by mounting base temperature and PCB copper area.
This device belongs to Nexperia's portfolio of automotive-grade power MOSFETs designed for high-reliability environments. The LFPAK56 package offers a balance between thermal performance and mechanical stability, utilizing copper clip technology to minimize resistance and enhance heat dissipation compared to traditional plastic packages.
No public confirmed substitute part numbers are documented in the provided datasheet. Cross-reference with other Nexperia LFPAK56 devices only if pinout and electrical specifications match exactly.
Yes, the product has been specifically designed and qualified to AEC-Q101 for use in linear mode, particularly for airbag applications.
The maximum junction temperature (Tj) is 175 °C.