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BUL128 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is TRANS NPN 400V 4A TO-220. Review the specifications below when checking this part for your BOM.
The BUL128 is a high voltage fast-switching NPN power transistor manufactured using Multi Epitaxial Planar technology. It features a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide Reverse Biased Safe Operating Area (RBSOA). The device is housed in a TO-220 package and is designed for lighting applications and low-cost switch-mode power supplies.
Verify the specific ordering suffix against official STMicroelectronics documentation, as suffixes may indicate variations in packaging or tape-and-reel configurations. Confirm that the component meets RoHS compliance requirements if applicable to your design constraints. Ensure thermal management solutions align with the specified junction-to-case and junction-to-ambient thermal resistance values provided in the datasheet.
Select this component when high voltage handling and rapid switching are required in compact designs. The TO-220 package facilitates efficient heat dissipation through the mounting base. Consider the pre-selected DC current gain groups (A and B) for consistent performance in amplification or switching circuits requiring predictable hFE characteristics across production batches.
This NPN power transistor belongs to STMicroelectronics' legacy discrete semiconductor portfolio. It utilizes advanced epitaxial processes optimized for high-voltage applications. The device serves as a robust solution for industrial and consumer electronics requiring reliable power switching under demanding electrical conditions.
Consult official cross-reference lists for verified substitutes. Ensure replacement parts match the TO-220 footprint, pinout configuration, and maximum voltage/current ratings to maintain circuit integrity without redesign.
The BUL128 is manufactured using high voltage Multi Epitaxial Planar technology.
It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA.
Yes, the product is pre-selected in DC current gain into Group A and Group B for reliable operation.
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