BUV27G

Single Bipolar Transistors Overview

The BUV27G is a high-voltage NPN silicon epitaxial planar transistor manufactured by onsemi. Designed for general-purpose switching and amplification applications, this component features a robust construction suitable for demanding electronic circuits. It operates with a collector-emitter voltage rating of 400V and a collector current capability of 1.5A. The device utilizes a TO-220AB through-hole package to facilitate effective heat dissipation during operation. Key electrical characteristics include a DC current gain (hFE) range typically between 10 and 20 at specified test conditions. These specifications define its suitability for power management tasks requiring reliable performance under high voltage stress.

Single Bipolar Transistors Feature Summary

• High breakdown voltage capability for robust operation in high-voltage circuits
• Epitaxial planar construction ensuring stable thermal and electrical performance
• Through-hole packaging design optimized for efficient heat dissipation

Single Bipolar Transistors Applications

• General-purpose switching circuits
• Amplifier stages in audio or signal processing equipment
• Power supply output stages

Single Bipolar Transistors Procurement Notes

Verify the exact ordering suffix against official onsemi documentation to confirm pinout configuration and specific electrical binning requirements. Ensure that the procurement channel provides genuine components with traceable manufacturing data. Cross-reference the date code and lot number with the manufacturer's quality assurance records to prevent counterfeit infiltration. Confirm that the package type matches the intended PCB footprint and thermal management strategy before finalizing purchase orders.

Single Bipolar Transistors Selection Notes

Select this component when circuit designs require a single NPN transistor capable of handling 400V collector-emitter voltage and 1.5A continuous current. Evaluate the thermal resistance characteristics of the TO-220AB package against the expected power dissipation levels in the target application. Compare the DC current gain specifications with the base drive capabilities of the controlling logic to ensure adequate saturation or linear operation margins.

Single Bipolar Transistors Part Context

This transistor belongs to the family of high-voltage NPN silicon devices produced by onsemi. It serves as a discrete solution for power control tasks where integrated circuits lack sufficient voltage ratings. The component complements other discrete semiconductors in power electronics assemblies, providing a standalone switching element for medium-power applications.

Single Bipolar Transistors Replacement Considerations

Consult official cross-reference guides for verified substitutes such as the BUV27D or similar high-voltage NPN transistors from compatible manufacturers. Verify that any replacement maintains identical pinout configurations and meets or exceeds the original voltage and current ratings.