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The BUZ31 E3046 is an N-channel enhancement-mode SIPMOS power MOSFET manufactured by Infineon Technologies. It features a maximum drain-source voltage of 200 V and a continuous drain current of 14.5 A. The device has a maximum on-state resistance of 200 mOhms and utilizes the I2PAK (TO-262) package. This component is designed for high-power switching applications requiring robust performance.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for obsolete status indicators, as availability may be limited. Ensure packaging matches specifications for TO-262/TO-262-3 form factors during receipt inspection.
Select this component for applications requiring 200 V blocking voltage and 14.5 A continuous current. Consider thermal management requirements due to the 200 mOhm on-resistance. Verify compatibility with existing PCB footprints for the I2PAK package before integration into new designs.
This part belongs to Infineon's SIPMOS family, known for reliable power switching. The BUZ31 series provides a balance of voltage rating and current capacity suitable for general-purpose power electronics. It represents a standard solution for medium-power industrial and automotive applications.
Public sources indicate IRF640STRLPBF as a similar substitute. Verify pinout compatibility and electrical parameter equivalence before replacement. Check for updated manufacturing status as original parts may be obsolete.