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Product Detailed Parameters
- Description：MOSFET N-CH 200V 14.5A D2PAK
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：200 V
- Current - Continuous Drain (Id) @ 25°C：14.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：200mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1120 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：95W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TO263-3
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The BUZ31H is an N-channel enhancement mode power MOSFET from Infineon's SIPMOS series, designed for high-voltage switching applications. It features a Drain-Source breakdown voltage (VDS) of 200 V and a Gate-Source breakdown voltage (VGS) of 20 V. The device supports a continuous drain current (ID) of 14.5 A and offers a maximum on-state resistance (RDS(on)) of 200 mΩ. With a power dissipation capability of 95 W and a thermal resistance characteristic suitable for through-hole mounting in TO-220FP packages, it operates within a temperature range of -55°C to +150°C.
Feature Summary
- N-channel enhancement mode construction utilizing SIPMOS technology
- High voltage handling capability with 200 V drain-source breakdown rating
- Robust thermal performance supporting up to 95 W power dissipation
- Through-hole compatible packaging for reliable board mounting
Applications
- General purpose power switching circuits
- DC-DC converter topologies
- Motor control systems
- Industrial power supplies
Procurement Notes
Verify the specific suffix 'H' against official Infineon documentation to confirm package type and tape/reel specifications. Ensure the ordering part number matches the exact electrical characteristics required for your design, as variations may exist within the product family. Cross-reference the datasheet revision date to ensure compliance with current RoHS standards and material declarations before finalizing procurement.
Selection Notes
Select this component when a 200 V rating is required for N-channel switching. The 200 mΩ RDS(on) at specified gate voltages determines conduction losses. Consider the TO-220FP package for adequate heat sinking in high-current scenarios. Verify that the 14.5 A continuous current rating aligns with the thermal management strategy of the target application environment.
Part Context
This device belongs to Infineon's SIPMOS power transistor lineup, which focuses on robust N-channel MOSFETs for industrial and consumer electronics. The BUZ31H variant specifically targets applications requiring moderate voltage isolation and reliable switching performance in through-hole assemblies, distinguishing it from surface-mount optimized families.
Replacement Considerations
Consult official Infineon substitution guides for verified equivalents. Generic replacements must match the 200 V VDS, 14.5 A ID, and TO-220FP package constraints to ensure mechanical and electrical compatibility without redesigning the PCB footprint or thermal interface.
