BUZ32 H

Description：MOSFET N-CH 200V 9.5A TO220-3
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tube

SKU:04e48d78a420 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 200V 9.5A TO220-3
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：200 V
Current - Continuous Drain (Id) @ 25°C：9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：400mOhm @ 6A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：530 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：75W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：PG-TO220-3
Package / Case：TO-220-3

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BUZ32 H

Overview

The BUZ32 H is an N-channel, enhancement-mode power transistor from Infineon Technologies. It features a maximum drain-source voltage of 200 V and a continuous drain current of 9.5 A at 29 °C case temperature. The device has a typical on-resistance of 0.3 Ω and a maximum of 0.4 Ω at VGS = 10 V and ID = 6 A. It supports pulsed drain currents up to 38 A and offers avalanche energy ratings of 6.5 mJ (periodic) and 120 mJ (single pulse). Power dissipation reaches 75 W at 25 °C, with an operating junction temperature range of -55 °C to +150 °C. The component is housed in a PG-TO-220-3 package.

Feature Summary

Enhancement mode operation with high breakdown voltage capability
Avalanche-rated for robustness against inductive switching transients
Low on-resistance optimized for efficient conduction
High thermal stability across extended temperature ranges

Applications

General-purpose power switching
Inductive load control
Power amplification circuits

Procurement Notes

Verify the specific ordering part number suffix to ensure compatibility with required packaging or tape-and-reel specifications. Confirm that the requested revision matches the design requirements. Check for RoHS compliance status if environmental regulations apply. Ensure the supplier provides valid traceability documentation for quality assurance purposes.

Selection Notes

Select this component for applications requiring moderate voltage blocking and current handling capabilities. Consider the thermal resistance characteristics when designing heat sinking solutions. Evaluate the gate charge parameters for driver circuit compatibility. Ensure the operating conditions remain within the specified safe operating area limits.

Part Context

This device belongs to the SIPMOS® family of power transistors. It utilizes planar trench technology to achieve low on-resistance and fast switching speeds. The PG-TO-220-3 package provides reliable mounting and thermal management for through-hole PCB assembly.

Replacement Considerations

Consult official replacement guides for compatible alternatives. Verify pinout compatibility and electrical parameter equivalence before substitution.