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Product Detailed Parameters
- Description：MOSFET N-CH 200V 9.5A TO263-3
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：200 V
- Current - Continuous Drain (Id) @ 25°C：9.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：400mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：530 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：75W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TO263-3-2
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The BUZ32H3045AATMA1 is an N-channel power MOSFET manufactured by Infineon Technologies. It features a drain-to-source voltage (Vdss) rating of 200 V and a continuous drain current (Id) of 9.5 A at case temperature. The device utilizes SIPMOS technology and is housed in a surface-mount PG-TO263-3-2 package, also known as TO-263 or D2Pak. This component is designed for high-efficiency switching applications requiring robust performance within the specified thermal constraints.
Feature Summary
- N-channel silicon MOSFET construction utilizing SIPMOS technology
- Surface-mount PG-TO263-3-2 package with integrated thermal tab
- Rated for 200 V drain-to-source blocking voltage
- Capable of handling 9.5 A continuous drain current under specified case conditions
Applications
- DC-DC converter circuits
- Motor control systems
- Power supply switching stages
Procurement Notes
Verify the specific datasheet revision and electrical characteristics directly from Infineon Technologies documentation before integration. Confirm that the PG-TO263-3-2 package dimensions match the target PCB footprint. Ensure thermal management designs account for the specified case temperature ratings to maintain reliable operation under load.
Selection Notes
Select this component when a 200 V N-channel MOSFET with approximately 9.5 A current capability is required in a TO-263 form factor. Evaluate thermal resistance parameters against the system's heat dissipation requirements. Compare on-resistance values with alternative devices to ensure efficiency targets are met for the intended switching frequency and duty cycle.
Part Context
This part belongs to the Infineon SIPMOS series, which focuses on optimized power loss and switching performance. The TO-263 package provides a balance between power handling capacity and surface-mount convenience. It serves as a discrete solution for medium-power applications where through-hole mounting is impractical but higher current than small signal packages allows.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source data. Consult official Infineon cross-reference tools or authorized distributor databases for verified equivalents.
