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Product Detailed Parameters
- Description：N-CHANNEL POWER MOSFET
- Series：-
- Mfr：Harris Corporation
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：500 V
- Current - Continuous Drain (Id) @ 25°C：4.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1.5Ohm @ 2.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2000 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：75W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Overview
The BUZ41A is an N-Channel enhancement mode silicon gate power field effect transistor manufactured by Harris Corporation. It features a Drain to Source Voltage (Vdss) of 500 V and is designed for applications such as switching regulators. The component utilizes MOSFET technology and is housed in a standard package suitable for power electronics.
Feature Summary
- N-Channel enhancement mode silicon gate construction
- Optimized for high-speed and low-voltage operations
- Designed specifically for switching regulator applications
Applications
- Switching regulators
- High-speed power switching circuits
- Low-voltage operation systems
Procurement Notes
Verify the manufacturer designation as Harris Corporation or its successor entities, noting that original Harris Semiconductor assets were acquired. Confirm the specific package type and pinout configuration against current datasheets, as legacy documentation may vary. Ensure the part status is active if new procurement is required, or validate compatibility if sourcing from surplus channels. Cross-reference the 500 V rating with application requirements.
Selection Notes
Select this component for designs requiring an N-Channel MOSFET with a 500 V breakdown voltage. Consider its suitability for switching regulator topologies where high-speed performance is necessary. Evaluate the thermal management requirements associated with its power dissipation capabilities. Compare input capacitance specifications, noted around 2000 pF at 25 V, against drive circuit constraints to ensure efficient switching transitions.
Part Context
This device belongs to the family of power MOSFETs produced by Harris Semiconductor, which was a significant player in analog and mixed-signal semiconductor manufacturing before its acquisition. The BUZ series typically targets industrial and consumer power supply applications. Understanding the corporate history helps in tracing documentation lineage and identifying equivalent parts from current manufacturers who inherited these product lines.
Replacement Considerations
Consult official replacement lists from the current rights holder for direct equivalents. Verify electrical parameters such as Vdss and on-resistance when considering third-party substitutes. Ensure pin compatibility and thermal characteristics match the original design constraints.
