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Product Detailed Parameters
- Description：MOSFET N-CH 200V 5.5A TO220-3
- Series：SIPMOS®
- Mfr：Harris Corporation
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：200 V
- Current - Continuous Drain (Id) @ 25°C：5.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：600mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：530 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：40W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：PG-TO220-3
- Package / Case：TO-220-3
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Overview
The BUZ73A is an N-channel power MOSFET manufactured by Infineon Technologies, belonging to the OptiMOS product family. It features a silicon technology construction housed in a TO-220-3 through-hole package. The device provides a drain-source breakdown voltage of 200 V and supports a continuous drain current of 5.5 A. Key electrical characteristics include a maximum on-resistance of 600 mOhms at the gate-source voltage limits of -20 V to +20 V. Power dissipation capability reaches 40 W, with an operating temperature range spanning from -55 °C to +150 °C.
Feature Summary
- Utilizes OptiMOS technology for optimized switching performance
- Designed for high-voltage applications with 200 V breakdown capability
- Supports robust thermal operation up to 150 °C junction temperature
Applications
- High-voltage power switching circuits
- DC-DC converter topologies
- Motor control systems requiring moderate current handling
Procurement Notes
Verify component authenticity due to potential availability issues. Confirm specific ordering suffixes against official datasheets as they may indicate variations in packaging or testing standards. Check manufacturer documentation for end-of-life status and recommended alternative components before finalizing procurement plans.
Selection Notes
Evaluate thermal management requirements carefully given the 40 W power dissipation rating in a TO-220-3 package. Ensure gate drive voltages remain within the specified -20 V to +20 V range to prevent damage. Consider the 600 mOhm on-resistance impact on conduction losses in low-voltage, high-current scenarios.
Part Context
This component belongs to the BUZ73 series of N-channel MOSFETs produced by Infineon Technologies. The OptiMOS branding indicates a specific process technology focused on balancing switching speed and conduction efficiency. The TO-220-3 package facilitates easy mounting on heat sinks for thermal regulation in industrial and consumer electronics applications.
Replacement Considerations
Consult official Infineon documentation for verified substitute part numbers. Cross-reference parameters such as Vds, Id, and Rds(on) when evaluating alternatives. Ensure pinout compatibility and thermal characteristics match the original design requirements.
