BUZ73A H

Description：MOSFET N-CH 200V 5.5A TO220-3
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tube

SKU:d46eaca203a2 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 200V 5.5A TO220-3
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：200 V
Current - Continuous Drain (Id) @ 25°C：5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：600mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：530 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：40W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：PG-TO220-3
Package / Case：TO-220-3

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BUZ73A H

Overview

The BUZ73A H is an N-channel SIPMOS power transistor manufactured by Infineon Technologies. It features a PG-TO-220-3 package and operates with a continuous drain current of 5.5 A at 37 °C case temperature, and a pulsed drain current of 22 A at 25 °C. The device has a maximum drain-source voltage of 200 V and a typical on-resistance of 0.5 Ω at VGS = 10 V and ID = 4.5 A. Power dissipation reaches 40 W at 25 °C case temperature. Operating junction temperature ranges from -55 °C to +150 °C.

Feature Summary

Enhancement mode operation for standard switching applications
Rated for avalanche energy handling under specified conditions
Integrated body diode with defined forward characteristics

Applications

High-voltage power switching circuits
Inductive load control systems
DC-DC converter topologies

Procurement Notes

Verify the exact ordering code against official Infineon documentation before procurement. Confirm that the component meets all required electrical specifications for your specific application environment. Check for any regional distribution restrictions or availability updates directly through authorized channels.

Selection Notes

Select this component based on its 200 V breakdown voltage and 5.5 A continuous current rating. Ensure thermal management solutions can maintain the case temperature within limits to support the 40 W power dissipation capability. Consider the gate threshold voltage range when designing drive circuits.

Part Context

This part belongs to the BUZ73 series of SIPMOS power transistors. It utilizes Infineon's silicon planar technology optimized for high-voltage switching performance in through-hole packages.

Replacement Considerations

Cross-reference with other N-channel MOSFETs offering similar 200 V ratings and TO-220-3 packaging. Verify pinout compatibility and ensure equivalent thermal resistance values are met.