SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BUZ73A H3046 is a SIPMOS power transistor manufactured by Infineon Technologies. It features an N-channel configuration housed in a PG-TO-220-3 package. Key electrical parameters include a drain-source breakdown voltage (Vds) of 200 V, a continuous drain current (Id) of 5.5 A, and a maximum on-resistance (Rds(on)) of 0.6 Ω. The component is designed for through-hole mounting and supports lead-free assembly.
Verify the specific suffix 'H3046' against official Infineon documentation to confirm packaging or tape-and-reel specifications. Ensure compatibility with PG-TO-220-3 footprints. Confirm RoHS compliance status via the manufacturer's datasheet before integration into regulated assemblies.
Select this component when a 200 V rating and 5.5 A continuous current capacity are required in a through-hole package. The 0.6 Ω Rds(on) dictates thermal management requirements. Compare against other SIPMOS variants if lower resistance or surface-mount options are needed for the specific application constraints.
This part belongs to Infineon's SIPMOS family, which integrates standard MOSFET advantages like voltage control and fast switching. The BUZ73A series is distinct from the HITFET smart power switch lines, focusing on discrete power transistor applications rather than integrated diagnostic features.
Check for discontinued status as some sources indicate manufacturing end-of-life. Verify pinout compatibility with PG-TO-220-3 packages when sourcing alternatives. Cross-reference Vds, Id, and Rds(on) values to ensure equivalent performance in existing designs.