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Product Detailed Parameters
- Description：MOSFET N-CH 200V 5.5A TO220-3
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：200 V
- Current - Continuous Drain (Id) @ 25°C：5.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：600mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：530 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：40W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：PG-TO220-3
- Package / Case：TO-220-3
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Overview
The BUZ73AE3046XK is an N-channel power MOSFET manufactured by Infineon Technologies. It features a drain-source voltage rating of 200V and a continuous drain current capacity of 5.5A at case temperature. The device is housed in a TO-262 (3+Tab) package with tape-and-reel packaging. Key electrical characteristics include typical transfer properties where drain current is defined as a function of gate-source voltage, and on-state resistance behavior relative to junction temperature under specific test conditions.
Feature Summary
- N-channel silicon MOSFET technology for power switching applications
- High voltage blocking capability suitable for industrial circuits
- Thermal management via exposed tab design
Applications
- Industrial motor control systems
- Power supply output stages
- General purpose switching applications
Procurement Notes
Verify the exact package variant upon ordering, as sources indicate both TO-262 and TO-220-3 configurations for this part number. Confirm the manufacturer datasheet for precise thermal resistance values and absolute maximum ratings before finalizing the design. Ensure the component meets all required environmental specifications for the intended operating temperature range.
Selection Notes
Select this component for applications requiring 200V breakdown and moderate current handling up to 5.5A. Consider the thermal performance and package type when designing heat dissipation strategies. Compare on-state resistance and gate charge parameters against alternative devices to optimize efficiency for the specific switching frequency requirements.
Part Context
This device belongs to Infineon's discrete power MOSFET portfolio, designed for robust performance in demanding electronic environments. The product line emphasizes reliability and thermal stability for automotive and industrial sectors.
Replacement Considerations
Consult official substitution lists for compatible N-channel MOSFETs with matching voltage and current ratings. Verify pinout compatibility and thermal characteristics before replacing the original component.
